onsdag 23 september 2015

CMOS MEMS Loudspeaker and elecronic ear, thymphanic membran

CMOS MEMS Loudspeaker and elecronic ear, thymphanic membran

If a CMOS MEMS Loudspeaker sending Sound in Newton/mm(F/mm) to the thymphanic membrane(who hear the sound) and do not rely care the distance, passing through material and longer(mm), as more force(N) as more distance from thymphanic membrane, i just think a electronic ear or a human ear could maeby hear it close. A CMOS MEMS Loudspeaker do the same work, and dont care about circumstances.


Richard Svanberg

fredag 11 september 2015

SoC Issues for RF Smart Dust

http://www.cs.berkeley.edu/~culler/AIIT/papers/radio/Cook%20IEEE%20Proc%202006.pdf

SoC Issues for RF Smart Dust

Wireless sensor nodes, each a self-powered system performing sensing, communication, and computation, form reliable mesh networks coordinating efforts to add intelligence to the environment.

By Ben W. Cook, Student Member IEEE, Steven Lanzisera, Student Member IEEE, and Kristofer S. J. Pister

ABSTRACT | Wireless sensor nodes are autonomous devices incorporating sensing, power, computation, and communication into one system. Applications for large scale networks of these nodes are presented in the context of their impact on the hardware design. The demand for low unit cost and multiyear lifetimes, combined with progress in CMOS and MEMS processing, are driving development of SoC solutions for sensor nodes at the cubic centimeter scale with a minimum number of offchip components. Here, the feasibility of a complete, cubic millimeter scale, single-chip sensor node is explored by examining practical limits on process integration and energetic cost of short-range RF communication. Autonomous cubic millimeter nodes appear within reach, but process complexity and substantial sacrifices in performance involved with a true single-chip solution establish a tradeoff between integration and assembly.

KEYWORDS | Low-power circuits; low-power RF; Smart Dust; wireless mesh networks; wireless sensor networks; wireless sensors I.

INTRODUCTION AND HISTORY The term BSmart Dust[ has come to be used to describe a wide range of wireless sensor network hardware at a small scale down to a handful of cubic millimeters [1]. Each wireless sensor node, or Bmote,[ contains one or more sensors, hardware for computation and communication, and a power supply (Fig. 1). Motes are assumed to be autonomous, programmable, and able to participate in multihop mesh communication. The genesis of Smart Dust was a workshop at RAND in 1992 in which a group of academics, military personnel, and futurists were chartered to explore how technology revolutions would change the battlefield of 2025 [2]. By this time it was clear that MEMS technology was going to revolutionize low-cost, low-power sensing. Moore’s law was accurately predicting CMOS digital circuit performance improvements with no end in sight, and the wireless communication revolution, already firmly established in two-way pagers, was beginning to make its way into handheld cellphones. The confluence of these three technological revolutions in sensing, computation, and wireless communication placed the major sensor mote functions on asymptotic curves down to zero size, power, and cost over time. Furthermore, the potential for cointegration of CMOS and MEMS made single-chip sensors with integrated signal conditioning possible at low cost [3]–[11]. In 1996, the term BSmart Dust[ was coined to describe the ultimate impact of scaling and process integration on the size of an autonomous wireless sensor [12]. Several DARPA-sponsored workshops in the mid-1990s fleshed out some of the implementation and application details of the 1992 vision, and key research proposals were written and funded at the University of California, Los Angeles (UCLA); the University of California, Berkeley; and the University of Michigan, Ann Arbor. It was clear to the community at that time that low-cost ubiquitous wireless sensor networks would have a revolutionary impact on military conflict. What was not as clearly anticipated was the potential impact on commercial and industrial applications. The first wireless sensor motes, called COTS (commercial-off-the-shelf) Dust, were built early in the Smart Dust project using printed circuit boards and offthe-shelf components. It was shown that these inch-scale devices could perform many of the functions predicted in the 1992 workshop, including multihop message passing and mote localization [13]. COTS dust and other macroscale motes were developed to explore sensor network software and individual mote architecture as well as deploy small scale networks [14]–[16]. Manuscript received August 24, 2005; revised February 21, 2006. The authors are with the University of California, Berkeley, CA 94720-1774 USA (e-mail: cookbw@eecs.berkeley.edu; slanzise@eecs.berkeley.edu; pister@eecs.berkeley.edu). Digital Object Identifier: 10.1109/JPROC.2006.873620 0018-9219/$20.00 2006 IEEE Vol. 94, No. 6, June 2006 | Proceedings of the IEEE 1177

While great strides were made in miniaturization and power reduction of the hardware, perhaps the most important event during this early period was the observation that networks of autonomous sensor motes represented a ubiquitous, embedded computing platform [17]–[20], and they needed a new operating system to match. Proposed in the Endeavour project [21], the TinyOS operating system [22] was developed under DARPA funding and put into the public domain, along with all of the COTS Dust hardware designs, and a thriving open-source sensor networking community was born. Meanwhile, in 1999 the IEEE formed the 802 working group 15, with a charter to develop standards for wireless personal area networking (WPAN), from which the lowrate WPAN 802.15.4 standard emerged. The 802.15.4 standard was designed from the beginning to be a lowpower, low-complexity solution for sensor networking in industrial, automotive, and agricultural applications [23]. A spinoff group from the industrial consortium HomeRF, focused on home automation applications, created the Zigbee standard in 2004. Zigbee 1.0 [24] is based on the 802.15.4 standard radio [25]. With the blessings of the IEEE on a radio standard, a consortium of large companies defining applications, and the help of the venture capital community, a new industry was born.

II. DEVELOPMENTS IN SENSOR MOTE HARDWARE The Mica mote (Fig. 2), the most popular mote used in research, was developed to mimic the expected architecture of a highly integrated mote while using off-the-shelf parts mounted on a common PC board to reduce development time. This mote includes a microcontroller, RF transceiver, and the ability to interface to a variety of sensors. The mote is powered by a pair of AA batteries, and these take up the majority of the unit’s volume [14]. Similar inchscale motes utilizing primarily off-the-shelf components are now commercially available from numerous sources [26]–[30]. Development of highly integrated sensor mote components started in the mid-1990s and resulted in multichip systems that could be assembled to create a mote. At UCLA, MEMS devices were combined with commercial CMOS chips that provided sensor control and readout as well as communication [31]. At the University of Michigan, Ann Arbor, a 10 000-mm3 device containing sensors, computation, and RF communication using multiple chips in a single package was developed and demonstrated [32]. Other wireless sensor multichip units or components have been demonstrated for a variety of industrial, commercial, and defense applications [33]–[42]. Fig. 1. Basic block diagram of a wireless sensor node. A complete node will consist of many blocks, most of which can be integrated onto a single standard CMOS die (blocks inside gray box). Energy storage (batteries, large capacitors, or inductors), energy scavenging, and some sensors will likely be off-chip components. The primary integrated blocks include a sensor interface, memory, computation, power management, and an RF transceiver.

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To minimize energy, passive optical communication was explored for early Smart Dust motes. The smallest optical mote to date (Fig. 3.) displaced only 4 mm3 and contained an 8-bit ADC, an optical receiver, a corner cube reflector passive optical transmitter, a light sensor, an accelerometer, a multivoltage solar cell power source, and limited computation [43]. A newer generation sensor mote, called the Spec mote, contained a microprocessor, SRAM, an RF transmitter, and an 8-bit ADC integrated onto a single CMOS die [41]. More recently, highly integrated chips with a complete RF transceiver, microprocessor, ADC, and sensor interface have been reported [44], and even commercialized [45]. Even these highly integrated chips still require an off-chip battery, some passive components, a crystal timing element, and an RF antenna, resulting in a complete package at the centimeter to inch scale.

III. WIRELESS SENSOR NETWORK APPLICATIONS Today’s sensor networks rely on a wired infrastructure to provide power and transfer data. The high cost of running wire for power and communication often dramatically exceeds the cost of the sensors themselves, slowing the adoption of sensor networks for all but the most critical applications. By drastically reducing installation costs, reliable low-cost wireless mesh networking places sensor networks on the same technology curves as the rest of the IT revolution. Wireless connectivity for sensors has been an attractive option for years, but, due to problems with reliability, adoption has been limited to applications where occasional loss of connectivity and data is acceptable. The current revolution in wireless sensing is being driven by the dramatic improvement in reliability and lifetime possible with wireless mesh networking. This is an echo of the Internet revolution, where point-to-point wired communications were replaced by multihop wired communication. The insensitivity of the Internet mesh to the loss of a path or a node is a key part of what makes the Internet reliable. The same concept applied to wireless sensor networks improves reliability. In commercial and consumer applications, motes can be used to eliminate the wiring cost for light switches, thermostats, and fire alarms. Fig. 4 illustrates the wireless routing mesh blueprint from an actual sensor network deployment. In this application, motes were installed throughout a health clinic in just 2 h to implement a low-cost air temperature and energy consumption monitoring system with a simple Web browser based control interface [46]. In applications such as inventory monitoring, motes will not be fixed in space. A primary concern of the network will be determining the location of motes on boxes or pallets on demand and this requires location discovery capability to be built into the network [47]. In some entertainment applications inertial sensing motes may be worn by humans to detect and interpret movements as communication gestures or control signals [48]–[52]. Similarly, wearable motes have been used to interpret human motion as musical gestures, allowing users to create music interactively in real time [53]. In these systems the latency requirements are more stringent than in typical monitoring scenarios and, since humans will be wearing the sensor mote, a small form factor is important. Defense applications drove much of the initial research in sensor networks. The Igloo White system was a wired sensor network employed from 1966 to 1972 along the Ho Chi Minh trail during the Vietnam War. In a more modern military application, wireless sensors were distributed throughout a mock urban battlefield to pinpoint a sniper’s location by acoustically detecting the arrival time of the muzzle blast at several different points in the field [54]. Sensor networks have also been proposed for position tracking and identification of people and fast-moving vehicles in both civilian and military scenarios [55].

IV. APPLICATION REQUIREMENTS AND HARDWARE IMPLICATIONS Applications for wireless sensor networks can be broken down into two categories: wire replacement and wirelessly enabled. In the former case, the cost of hardware for a wireless solution is generally dramatically lower than the comparable cost of running wiring. Once secure, reliable, low-power solutions are demonstrated in this domain, adoption is limited by caution, rather than cost. Wirelessly Fig. 2. The Mica mote combines sensing, power, computation, and communication into one package using off-the-shelf components.

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enabled applications, on the other hand, may require novel technologies such as dynamic mote localization.

A. Reliable Data Delivery Reliability in a multihop RF mesh sensor network can be defined in terms of end-to-end delivery of timestamped sensor data with a specified worst case latency. Time stamping requires some form of network synchronization, but the primary hardware impact of the reliability requirement is on the choice of radio and the use of spectrum. The majority of motes will operate in regulated but unlicensed bands, such as 902–928 MHz in North America, and 2.4–2.485 GHz throughout most of the world. Because these bands are open to transmitters putting out as much as 1 W, and motes are likely to have an output on the order of 1 mW to extend battery life, it is critical that motes be able to avoid high-power interferers to maintain adequate reliability. For example, even the spreading gain of the direct sequence spread spectrum 802.15.4 radio will not prevent an 802.11 transmitter from jamming several channels over distances of tens of meters [56]. Multipath propagation effects indoors cause similar problems for reliability, with time-varying Fig. 3. Conceptual drawing and SEM of the optical Smart Dust node presented in [43]. This multichip node displaced only 4 mm3 and featured a solar cell power source, temperature, light and acceleration sensors, an 8-bit ADC, and bidirectional optical communication.

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narrowband fading of many tens of dB commonly observed [57]. High-powered interferers and unpredictable fading preclude the use of fixed-frequency radios in highreliability applications. Reliable solutions will have the ability to avoid or work around those parts of the spectrum which are jammed or deeply faded. For relatively narrowband radios like 802.15.4, this implies some form of channel hopping at the medium access layer in addition to the direct sequence spreading defined in the physical layer of the radio.

B. Low-Power Consumption From a system deployment perspective, mote lifetimes measured in years are required for most applications in building and industrial automation. Operation from batteries and/or scavenged power is required. To avoid high battery replacement costs, this dictates a battery lifetime of between one and ten years. An AA-sized battery contains roughly 250 A-years of charge or about 12 000 J. For some lithium chemistries, the internal leakage is low enough that supplying this charge as a current of 25 A for a decade is possible while common alkaline chemistries have shorter lifetimes. The average power consumption of an inch-scale mote, then, must be in the range of tens to hundreds of microwatts or just a few joules per day. Achieving a total current consumption of tens of microamps requires deep duty cycling, on the order of 1% or less with off-the-shelf hardware [58]–[60]. Deep duty cycling implies that the hardware should be able to quickly transition between the powered state and the unpowered (and low leakage) state. At very low duty cycles, leakage power in the digital circuits, predominantly the SRAM, can dominate the system energy budget. Though the power required for active digital circuits is scaling down with minimum feature size of standard CMOS, leakage power is growing. Leakage power sets a lower bound on average power consumption of sensor motes and is a major obstacle to the scaling of digital circuits. In 130-nm bulk CMOS, for example, leakage is on the order of 1 W per kilobyte with a standard 6T SRAM [61]. Silicon-on-insulator (SOI) is a CMOS device technology offering substantial leakage reduction that has yet to be adopted into mainstream commercial use [62]. In addition to leakage issues, multihop mesh networking with radio communication in a deeply duty cycled environment presents major challenges to algorithm and software developers. Turning the radio off 99% of the time is easy, but knowing exactly when to turn it on again is not. Hardware support for some combination of mote-to-mote time synchronization, fast radio polling, or low-power detection of RF energy is desirable. Custom-designed circuits leveraging the relaxed performance specifications unique to sensor network Fig. 4. Deployment of a wireless sensor network in a health clinic. The network monitors air temperature and energy consumption and has a convenient central control interface [46].

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applications have been developed to drastically extend sensor mote lifetimes and/or reduce cost and size by minimizing energy consumption [63]–[66]. Fig. 5 provides a comparison of the energy consumption per operation of published custom ICs and off-the-shelf parts. In both commercial and custom solutions, the energetic cost of RF communication dwarfs that of other sensor node operations, making RF a bottleneck for size, cost, and lifetime improvements. In Section VI, the energy requirements of RF communication are explored and a systemlevel optimization of energy per transferred bit of a generic transceiver is performed. Unfortunately, the custom ICs presented in Fig. 5 operate optimally at different supply voltages and were not developed in the same CMOS process. Integration of these devices would require redesign in one process and efficient dc level conversion from a battery [67]. Ideally, the hardware would operate efficiently with the lithium cell potential and deep duty cycling. Since lithium chemistries generally provide over 3-V cell potential, this presents a challenge for integration in deep submicrometer CMOS, where normal supply voltages are half of the lithium potential or less. The computational requirements of a mote are generally consistent with MHz rather than GHz operation, allowing digital circuits to run as low as 0.5 V or less. Efficient dc to dc conversion from a constant 3 V supply to a duty cycled 0.5–1.8 V output will allow future systems-on-chip to achieve battery-referenced energy efficiencies similar to those shown in Fig. 5.

C. Security Security in sensor networks shares many of the same problems as IT security in general, with the beneficial exception that fewer humans are involved. As sensor networks come to be used in commercial, industrial, and defense applications, their security requirements will likely be just as stringent as those required of the information systems they feed [68]–[71]. Security requirements include access control, data encryption, message authentication, key exchange, and certification of trust. Link-level encryption and message authentication can be performed in software, but these low-level, time critical, and computationally intensive operations are a natural target for silicon support. The hardware for the Advanced Encryption Standard (AES) [72] is already incorporated in chips which support the 802.15.4 standard [60], [73]. For key exchange and certification, software implementations of the public key algorithms RSA and ECC have been demonstrated on 8- and 16-bit processors common in sensor network applications [74], [75]. Execution times are on the order of seconds to tens of seconds, and the memory requirements are substantial for a mote. The addition of integer multiplication units with large operand size will speed execution and reduce memory requirements roughly as the square of the operand size.

D. Location Discovery As the cost of motes falls and the number of wireless sensors increases, the cost of locating installed sensors will drive the development of automatic location discovery. This capability is critical for asset tracking applications and for many of the Bsprinkle deployment[ military and environmental monitoring applications envisioned for the technology. Furthermore, many applications require mobile motes with the ability to dynamically update position information [76]. Asset management and other tracking applications may require an accuracy of 1 m to find a person, laptop, or record file in an office building or hospital, several meters to find a crate in a warehouse, or many tens of meters to find a cargo container in a shipping yard. Acoustic localization systems with good performance have been implemented [77], but the physics of acoustic Fig. 5. Energetic costs of common sensor node operations based on commercially available hardware and lowest energy published solutions.

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propagation constrain the domain of application of these systems. GPS may be very useful for localizing parts of a sensor network, but in general motes will not have the satellite visibility necessary for these systems, even if the power requirements could be met. One solution is a pairwise range sensor coupled with either centralized or distributed computation of position based on the sparse pairwise data [78], [79]. Measurement of received RF signal strength has been proposed as a surrogate for a range sensor, but multipath fading makes this technique unsuitable for most applications [76], [80]. Localization based on RF time-of-flight (TOF) between motes is currently being investigated as a more accurate solution [81]. Multipath propagation of radio waves and clock drift between motes are the primary contributors to error in RF TOF systems, and these problems must be addressed and mitigated in a reasonable system.

V. SYSTEM INTEGRATION: FEASIBILITY OF A SINGLE-CHIP SENSOR MOTE The mock-up device at the bottom of Fig. 13 below represents a hypothetical 2-mm3 mote-on-a-chip combining cutting-edge process integration and circuit techniques. In reality, the most integrated mote-on-a-chip systems today still require several off-chip components. Given recent advances in process integration, this section explores the possibility of integrating each system block on-chip to create a cubic millimeter scale complete sensor mote.

A. Cointegration of Digital, Analog, and RF Any sensitive analog circuits must be isolated from the noise-generating digital devices of the DSP and microprocessor. Integration of both devices is commonplace today as process features and design techniques have been developed to isolate digital circuits from analog [82], [83]. Many circuits typically found in an RF transceiver require elements not needed for digital or low-frequency analog operation, such as inductors and high-density capacitors with low series resistance. Thus, RF circuits have historically required several off-chip components. Only recently have IC manufacturers added process features targeted at enabling integration of RF circuits. Currently, several manufacturers offer high density capacitors and thick top metal layers for inductors. Due to these process advancements, modern RF transceivers are approaching complete integration [84]. Even with integrated RF passive components, there are still a few elements impeding complete integration of RF transceivers, namely the antenna and timing reference. The antenna is difficult to integrate because its optimal dimensions are on the same order as the wavelength of the RF signal, making antennas in the low-GHz range ill-suited to integration. The optimal dimensions can be scaled down by increasing frequency and making the antenna resonate, leading many to investigate integrated resonant antennas at and above 10 GHz [85]–[87]. Even at appropriately high frequencies, integrated antennas have thus far only demonstrated low efficiencies. Furthermore, propagation losses are generally worse at higher frequency. As a result, an integrated antenna will incur a substantial power penalty with current technology. If a modest size increase and some assembly are acceptable, commercially available miniaturized antennas may provide the best combination of cost-effectiveness, size, and efficiency. Efficient dielectric chip antennas displacing only about 10 mm3 are commercially available for use at low-GHz frequencies from a variety of sources [88], [89]. However, as designed, these chip antennas require sizable ground planes for good performance. The timing reference is another element of RF transceivers not amenable to integration. RF transceivers typically use a resonant quartz crystal to synthesize high frequency signals needed for transmission and reception. The geometry of crystal references is precisely controlled to create a mechanical resonance that is stable across a wide temperature band. There are no conventional circuit elements that can offer precision comparable to a crystal. However, MEMS resonators are currently being explored in industry and academia as a quartz crystal replacement technology because of their potential for integration and cost reduction [90]–[93]. Currently, the temperature stability of MEMS resonators is not as good as quartz crystals, but temperature compensation may be employed to mitigate this problem [94]. As this technology matures, MEMS components may supplant not only the crystal timing element, but filters, mixers, and RF oscillators as well [95].

B. Sensors For some applications, the sensors available in a standard integrated circuit process may be sufficient. Temperature, magnetic field, and capacitive fingerprint sensors have all been demonstrated in standard CMOS as well as megapixel cameras with on-chip image processing [96]–[100]. Integrated sensing of colored light can also be done in CMOS using metal grating patterns or variable depth PN junctions as a color filter [98], [101]. Imaging arrays are increasingly finding applications in noncamera applications, such as motion-flow sensing in computer mice. Imaging of legacy dials, knobs, and lights in industrial environments combined with local signal processing at the sensor to transmit only the dial position is a potentially low-power, low data rate application. There are a host of miniaturized sensors possible with MEMS technology: linear and angular rate acceleration, pressure, chemical, fluid flow, audio microphones, and more [3], [4], [102]–[105]. While all of these sensors are also available off-the-shelf, custom designed MEMS sensors have the distinct advantages of low cost and size as well as the potential for integration with circuits.

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Many methods of integrating MEMS devices with circuits have been demonstrated. One popular method is to etch away materials from commercially manufactured integrated circuit wafers to create mechanically free structures. The features of the resulting structures are defined using existing layers in the CMOS to selectively block etching. In [3], [4], [8], and [11], an electrochemical etching technique was applied to standard CMOS wafers after fabrication to create cantilevered beams and membranes for chemical, infrared, pressure, and other types of sensors. Dry etching techniques were applied to CMOS wafers in [7] and [106], to create inertial sensors and electrostatic actuators. An advantage of both of these integration techniques is low cost because no additional deposition or lithography is necessary after the circuits are fabricated (see Fig. 6). However, since the MEMS structures are defined by a stack of dielectrics and metals designed for CMOS, they may have undesirable mechanical properties. The performance of resonant MEMS devices used for both sensing and RF applications is particularly sensitive to the mechanical properties of the constituent materials. Thus, many have investigated other integration methods that permit the use of mechanically advantageous materials. Adding thin films of polycrystalline materials to fabricated CMOS wafers, or surface-micromachining, is a powerful technique that combines the advantages of integration with CMOS and high performance resonant MEMS. Integrated high-Q MEMS resonators and resonant sensors made from both polycrystalline Silicon (poly-Si) and silicon–germanium (poly-SiGe) films have been demonstrated with surface-micromachining techniques [5], [9], [10]. Unfortunately, the elevated processing temperatures required for poly-Si (well above 400 C) are too high for the aluminum metallization typical of standard CMOS. Thus, integrated poly-Si MEMS must either be machined into the wafers before metallization steps [9], [10] or added to fabricated CMOS without metallization [5]. However, the reduced processing temperatures of poly-SiGe are much more compatible with metallization, making postprocessed poly-SiGe a strong candidate for the future of CMOS-MEMS integration (see Fig. 6) [6], [104].

C. Scavenging and Storing Energy Both electrostatic MEMS devices and PZT transducers have been used to harvest energy from ambient mechanical vibrations [107]–[110]. It should be possible to Fig. 6. Demonstration of MEMS-CMOS integration by four different techniques. Top left: electrochemical etching [8] (SEM courtesy of G.T.A. Kovacs), Top right: deep reactive ion etch(DRIE) of single-crystal silicon bonded to CMOS [11] (SEM courtesy of G.T.A. Kovacs), bottom left: DRIE of prefabricated CMOS with metal-dielectric structural layers [7] (SEM courtesy R.T. Howe), bottom right: postprocessed SiGe on CMOS [6] (SEM courtesy G. Fedder).

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integrate these devices, since vibration harvesting may be performed with simple electrostatic MEMS. The achievable power density with this method is strongly dependent on the environment and the design of the transducer. However, theory predicts a power density of 1.16 W/mm3 is available from a device mounted on the casing of a constantly operating microwave oven [110]. The most abundant and practical form of ambient power comes from the sun. In full sunlight, the available solar power per unit area is roughly 1 mW/mm2 in the continental United States [111]. Simple silicon-based photovoltaic cells can convert this to electrical power with up to 25% efficiency [112]. The processing steps necessary to create silicon solar cells are quite compatible with standard IC manufacturing. In fact, the PN junctions inherent in the silicon of any integrated circuit are inadvertent solar cells. However, with standard CMOS, it is not straightforward to utilize these junctions as solar cells and simultaneously operate transistors on the same chip due to isolation issues. Integration of multijunction solar cells and CMOS circuitry has been demonstrated using silicon-on-insulator wafers with trench isolation [113]. Miniature, but not integrated, solar cells are currently available off-the-shelf from a variety of manufacturers. In particular, silicon-based, flexible, thin-film solar cells mounted on polymer substrates are now commercially available in custom sizes on the order of 1 mm2 and up [114]. To sustain reliable operation in the presence of fluctuating ambient solar or mechanical energy, a sensor mote must be able to store harvested energy. A promising technology for integrated energy storage is thin-film batteries. Work at Oak Ridge National Laboratory on lithium-based thin-film batteries [115] has led to commercial cells on the millimeter scale with high capacity and long cycle lives [116]–[120]. Packaging adds volume without increasing capacity, resulting in lower energy/volume ratios, but [115] reported 0.25 mA hr/cm2 at 4 V (or 36 mJ/mm2) in batteries as small as 5 mm2 and only 15 m thick without packaging. Battery discharge rates as high as 40 mW/cm2 are possible [115], and these cells can be laminated to a CMOS wafer, eliminating the need for packaging [117]. Cells as small as 50 m 50 m have been demonstrated using standard lithographic techniques [121]. Other recent work in thin-film batteries has produced promising results with lower cell potentials, but the cell capacity and robustness is far behind solid-state lithium-based batteries [122], [123].

VI. ENERGY REQUIREMENTS OF WIRELESS COMMUNICATION Based on a comparison of published solutions for RF transceivers and other sensor mote functions, the wireless communication circuits dominate the system energy budget. This section explores the energy requirements of wireless communication and derives approximate energy targets. As a first step, consider transmitting a single bit from one sensor mote to another over a distance r, using a carrier frequency f, and bitrate b. To determine the minimum required transmission power ðPTX;MINÞ, one must first determine how the signal power diminishes with distance, and then determine the minimum detectable signal power in the receiver ðPMDSÞ. If a maximum communication range ðrÞ is assumed, then PTX;MIN must be larger than PMDS by a factor equal to the transmission loss ðLPATHÞ due to propagation.

A. Transmission Loss Approximations: LPATH Electromagnetic theory states that the strength of a transmitted signal is attenuated with increasing distance according to the Friis equation [124] LPATH ¼ 4r 2 : (1) LPATH is the attenuation due to propagation and is the wavelength at the frequency of interest ( ¼ 30 cm at f ¼ 1 GHz). The Friis equation applies to free-space, line of sight propagation and, as such, underestimates path loss for nonideal conditions. In cluttered environments, path loss is much more complex. Several sources have utilized a modification to the Friis equation that roughly approximates propagation losses in less ideal environments, such as indoors [80] LPATH ¼ 4r0 2 r r0 n : (2) In this model, ro is a reference distance (ro ¼ 1 m is often used) beyond which the inverse square characteristic of the Friis equation no longer governs propagation losses because of obstacles and multipath interference. The exponent n characterizes the attenuation beyond ro and has been measured for various propagation conditions. For short-range indoor propagation in the low GHz range, n ¼ 4 is a common choice for the exponent [80], [125].

B. Minimum Detectable Signal Power: PMDS In any real receiver, there is a finite thermal noise power ðPNÞ inherent in the system that is proportional to both input bandwidth, BW, and the product kT; where T is temperature in Kelvin and k is Boltzmann’s constant PN ¼ kT BW: (3)

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The minimum detectable signal power in a receiver ðPMDSÞ is always greater than PN. The product of two terms, noise factor ðNFÞ and signal-to-noise ratio ðSNRMINÞ, quantifies the ratio by which PMDS must exceed PN for successful transmission. The noise performance of RF receivers is characterized by NF, defined as the ratio of the total equivalent noise power to the fundamental lower noise power limit PN. In the best case, NF equals 1, but it is often in the range of 1.5–10 for real receivers. Intuitively, higher NF implies that the receiver’s internal noise generators dominate over the noise incident on the antenna. The second term SNRMIN, describes the minimum required ratio of signal power to noise power that must be maintained to properly detect signals with a certain probability. For example, to average less than one error for every 1000 bits (or BER ¼ 103), a theoretical minimum SNRMIN of 12 dB is required when noncoherent FSK is the modulation technique and no coding is done [126]. Under these assumptions, the minimum detectable signal power in the receiver is given by product PMDS ¼ PN ðNF SNRMINÞ ¼ kT BW NF SNRMIN: (4)

C. Minimum Transmlission Energy per Bit: EBIT;TX Link margin ðLMÞ quantifies the maximum path loss between transmitter and receiver that can be tolerated while maintaining a reliable link. LM is given by the ratio of POUT to PMDS. At the maximum communication range ðrMAXÞ, LM is equal to LPATH. Therefore, given rMAX, the lower bound on transmitted power ðPTX;MINÞ is simply the product of LPATH and PMDS. POUT;MIN ¼ LPATH PMDS ¼ 4 r0 2 rMAX r0 n kT BW NF SNR: (5) To convert POUT;MIN to energy per bit ðEBIT;TXÞ, we must assume a relationship between the bitrate and the receiver input bandwidth BW. Bitrate is generally proportional to input bandwidth and, depending on the modulation technique, may be higher or lower than BW. For simplicity, we assume the bitrate is equal to BW. Then, EBIT;TX is given by EBIT;TX ¼ POUT;MIN bitrate 4r0 2 rMAX r0 n kT NF SNRMIN: Let bitrate ¼ BW: (6) To calculate the minimum EBIT;TX, assume the base station is an ideal, noncoherent FSK receiver (i.e., let NF¼1 and SNRMIN ¼12 dB) located rMAX meters away and apply (6). Assuming n ¼ 4, ro ¼ 1 m, rMAX ¼ 20 m and a 1-GHz carrier signal, the minimum energy per transmitted bit is only 20 pJVa factor of at least 102 lower than any of the reported values from Section IV. In this scenario, if a bitrate of 1 Mb/s is used, only 20 W must be transmitted to maintain a 20-m link. On the other hand, if a 2.4-GHz carrier is chosen, the minimum energy Fig. 7. Simplified block diagram of a low-IF or direct conversion RF transceiver.

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per bit increases to 114 pJ, because path loss is worse at higher frequencies. This calculation represents the minimum transmitted energy to reach a perfect receiver (i.e., NF ¼ 1) 20 m away. The total consumed energy by the transmitter must be substantially higher due to overhead circuit power ðPOH;TXÞ and nonideal efficiency in the output amplifier ðePAÞ.

D. Design Considerations and Practical Targets for EBIT When calculating network energy cost per bit, the power consumption of both the transmitting and receiving motes should be included. Second, the models for transmitter and receiver should take overhead power and nonideal SNR, NF, and PA efficiency ðePAÞ into account. A block diagram of a conventional direct-conversion or lowIF transceiver, labeled with sources of overhead power, is shown in Fig. 7. The outlined portions of Fig. 7 represent sources of power overhead. Though these blocks are needed for functionality, they constitute overhead in the sense that increasing power spent in them does not directly increase link margin. In both transmitter and receiver, a large portion of the overhead power is dedicated to generating a stable RF signal with a voltage controlled oscillator (VCO). Other significant sources of overhead are RF mixers for modulation and channel selection, ADCs, DACs, and lowfrequency filters. The power overhead of the VCO and RF mixers is relatively independent of BW. However, the overhead power in the DAC, ADC, and low-frequency filters for channel selection and baseband processing will depend on BW. Radios designed specifically for sensor networks in [63] and [127]–[130] reported numbers for power overhead between 0.17 and 0.9 mW in receive mode, 0.3–7 mW in transmit mode for bitrates of 300 kb/s and below. In contrast, increased power in the PA and LNA does directly increase link margin. In general, increased power in the LNA makes the receiver more sensitive by decreasing NF, but the proportional noise benefit steadily diminishes at high power levels as NF asymptotically approaches its minimum value of 1. On the other hand, the output of a PA can be roughly proportional to power consumed over a wide range. Efficient PA design over a broad range of power outputs is discussed in [131]. Power output of a PA can then be simply modeled by the product of efficiency ðePAÞ and power consumed ðPPAÞ. PA efficiencies ðePAÞ of 40% or higher have been reported for various PAs with output power from 200 W to 10 mW and beyond [127], [129], [132].

E. Optimal Bandwidth to Minimize EBIT Fig. 8 shows a first-order graphical representation of the power-performance tradeoffs in a simple RF Fig. 8. Graphical representation of first order model of power-performance tradeoffs in an RF transceiver. Labeled numeric values are based on the transceiver in [77].

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transceiver. The figure is labeled with reported values of POH;TX, POH;RX, PMDS and ePA from [127]. The simplified model is useful for demonstrating tradeoffs and deriving approximate energy consumption targets. Measured data reported in [63] is shown in Fig. 9 for comparison. The equations describing this model are given below. The term is dependent on antenna impedance, supply voltage, and other circuit parameters (see [131]), but is equal to 2 mW for the transceiver in [127] POH ¼ POH;RF þ PBB 1 þ BW BW0 (7) PMDS ¼ kT BW SNRMIN 1 þ PLNA (8) POUT ¼ ePA PPA: (9) The first question we wish to address is: Given a fixed power budget for a link, how should power be distributed between PA and LNA to maximize link margin ðLMÞ? Dividing (9) by (8), we get an equation for LM in terms of power consumption in PA and LNA. The goal is to maximize LM when the sum PPA þ PLNA is held constant, and the resulting equation, optimally relating LNA and PA power consumption, is shown below max PPAþPLNA¼C f g LM ) dLM dðPLNAÞ ¼ 0 ) PPA ¼ P2 LNA þ PLNA: (10) This ratio is independent of the path loss exponent assumed in (2). It is important to note that we have implicitly assumed a time synchronized network, where Fig. 9. Measured transceiver performance data reported in [63]. This 2.4-GHz radio operates from a 400-mV supply and achieves 4-nJ/bit communication with 92-dB link margin. PA efficiency is 44% and the power overhead is estimated as POH;TX ¼ 400 uW and POH;RX ¼ 170 uW.

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receiver and transmitter duty cycles are approximately equal. By setting LM ¼ LPATH from (2), we can use (8) and (9) to relate transceiver power consumption to range ðrMAXÞ and bitrate (again, assume bitrate ¼ BW) rMAX ¼r0 4r0 2 n ePA PPA kT BW SNRMIN PLNA PLNAþ 1 n : (11) Now, using (10) to relate PPA and PLNA PLNA;OPT ¼ rMAX r0 n 2 4r0 ePA kT BW SNRMIN 1 2 : (12) Fig. 10. Energy per bit and transceiver power distribution versus bandwidth for fixed link margin of 88 dB ( ( 3)). e.g., r 25 m by

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To incorporate the effect of transceiver startup time on the overall EBIT versus BW tradeoff, some knowledge of average number of data bits per transmission ðNAVGÞ and transceiver initialization, synchronization, and packet overhead time ðtINITÞ is needed. For the purpose of illustration, we assume NAVG ¼ 1000 bits and tINIT ¼ 1 ms. Assuming the transceiver is consuming full power during synchronization, the energy cost per bit is then the product of total link power and tINIT divided by NAVG EBIT;INIT ¼ ðPOH þ PPA þ PLNAÞ tINIT NAVG : (14) The total energy per bit, including initialization and transmission, is the sum of (13) and (14). EBIT is minimized Fig. 12. Top: optimum ratio of PA to LNA power. Bottom: energy per bit per meter (EBIT-MTR) versus the sum of PA þ LNA for 3 values of the path-loss exponent(n). Optimum link margin and range are labeled for each value of n.

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when the amount of energy spent during synchronization and data transmission are equal, or equivalently (see Fig. 10) BWOPT ¼ NAVG TINIT : (15)

F. Optimal Link Margin and Range to Minimize EBITMTR Suppose we wish to send a set of data over a long distance through a dense network with many available paths (Fig. 11, bottom). From a global network energy perspective, should we send the data the entire distance in one hop, in several tiny hops to nearest neighbor motes, or is there an ideal link range somewhere in between? In dealing with this question, energy per bit per meter ðEBIT MTRÞ is a more appropriate metric than EBIT. If path loss characteristics are known, we can find an optimum link range that will minimize the global network energy cost for data transport by minimizing EBIT MTR. Since (13) relates EBIT to both BW and r, EBIT MTR can be obtained by simply dividing EBIT by r. EBIT MTR is plotted versus power with BW fixed at 1 MHz for three values of the path-loss exponent at the bottom of Fig. 12. This plot shows that there exists an optimum energy range and link margin for transporting data through a network that depends on path-loss conditions and transceiver characteristics. The optimum link margin ðLM;OPTÞ varies by only 11 dB for values of n from two to four and has the lowest value when the path-loss exponent is highest, implying shorter hops are preferred when path-loss is worst. A more circuit focused link optimization is carried out in [131]. All quantitative information in this example has been based upon an extrapolation of transceiver performance data reported in [127]. The actual transceiver was designed for a 100 Kb/s bitrate and about 20 m of range, with a resulting EBIT;MIN of about 25 nJ/bit.

VII. DISCUSSION It is clear that a system-on-chip wireless sensor node with an active power dissipation of less than 1 mW is not only possible, but likely to be commercialized. The performance possible in such a mote will be impressive, including secure wireless communication at hundreds of kilobits per second over distances of tens of meters, multihop mesh networking, onboard sensors, 10- to 16-bit ADCs, and a sensor datapath. Today’s commercially available software runs all motes in a mesh network at less than 1% radio duty cycle [26]. This implies average mote power consumption of between 1 and 10 W. At these power levels, mote lifetimes above a decade will be possible with coin cell, or even button-cell batteries. Near-term IC process scaling will reduce the area required for memory and digital circuits to below a square millimeter, but the analog and RF portions will not scale as readily. Radio transceivers are unlikely to shrink much in finer line width processes, as their area is determined more by the physics of inductors than the transistors that drive them. Unless integrated resonant LC tanks are abandoned, low-GHz radios are stuck around a square millimeter. Process scaling driven by purely highspeed digital constraints is unlikely to provide the low leakage necessary for submicrowatt operation, but other Fig. 13. A complete sensor node may be implemented with varying levels of integration. While the cost, size, and power consumption of off-the-shelf sensor nodes is far from optimal, a single-chip system may not be the most advantageous either. The most economical solution is likely to be a hybrid of integrated and assembled parts. Cook et al.: SoC Issues for RF Smart Dust 1192 Proceedings of the IEEE | Vol. 94, No. 6, June 2006

applications will drive low-leakage options in fine-line width processes, and clever circuit design may solve the leakage problem even in standard processes. MEMS technology is likely to play a role in the integration of a broader selection of sensors on chip. In addition, RF filters and frequency references for both realtime clocks and RF local oscillators are possible. Similarly, nanotechnology is likely to be added first in the area of sensors. Improvements in the stability of low-power realtime clocks, based on MEMS, nano, or any other technology, would have an immediate impact on moteto-mote time synchronization and therefore power consumption. The integration of MEMS or nano could in principle reduce the size of radios well below a square millimeter, but these radios will face the same challenging RF environment as the radios that they replace, so frequency agile architectures with robustness to strong interference and deep fading will be required. While in principle it is possible to integrate a battery, antenna, and timing reference into a single-chip mote with no external components, this is unlikely to be the most economical approach. Integration of all the components of a mote onto a single chip will involve making substantial sacrifices in performance. The efficiency of a millimeter-scale chip-based antenna will be lower than that of a well designed antenna external to the chip. Power scavenging and storage in a future integrated process will not match what is possible with optimized off-chip components. On the other hand, on-chip timekeeping and frequency references using MEMS or nano may ultimately rival or even exceed the performance of off-chip crystal references. Fig. 13 illustrates some possible incarnations of a wireless sensor mote, underscoring size, power, and performance tradeoffs of integration versus assembly. For all of the performance and cost limitations of a true system-on-chip mote with no external components, surely at some point they will be produced, if only for academic research. When that is the case, then wafers full of completely functional motes will be formed in the final metal etch of a CMOS process, take their first photovoltaic breaths of life from the plasma’s glow, and start chatting with each other while waiting for wafer passivation and dicing.

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Cook et al.: SoC Issues for RF Smart Dust Vol. 94, No. 6, June 2006 | Proceedings of the IEEE 1195

ABOUT THE AUTHORS Ben W. Cook (Student Member, IEEE) received the B.E. degree from Vanderbilt University, Nashville, TN, in 2001. He is currently working toward the Ph.D. degree at the University of California, Berkeley. Since the summer of 2003, he has worked as a Design Engineer and Consultant for Dust Networks, Hayward, CA, where he has worked on ultralow-power transceivers for the 900-MHz and 2.4-GHz ISM bands. His research has focused on low-power, highly integrated hardware for wireless sensor networks, with a particular emphasis on RF transceivers. Steven Lanzisera (Student Member, IEEE) received the B.S.E.E. degree from the University of Michigan, Ann Arbor, in 2002. He is currently working toward the Ph.D. degree at the University of California, Berkeley. He was an engineer with the Space Physics Research Laboratory at the University of Michigan from 1999 to 2002, where he worked on satellite integration and testing. He has held internships with Guidant Corporation and TRW Space Systems, respectively. His research has focused on low-power mixed signal IC design and RF time of flight ranging technologies. Kristofer S. J. Pister received the B.A. degree in applied physics from the University of California, San Diego, in 1986 and the M.S. and Ph.D. degrees in electrical engineering from the University of California, Berkeley, in 1989 and 1992. From 1992 to 1997 he was an Assistant Professor of Electrical Engineering at the University of California, Los Angeles, where he helped developed the graduate microelectromechanical systems (MEMS) curriculum, and coined the term BSmart Dust.[ Since 1996, he has been a Professor of Electrical Engineering and Computer Sciences at the University of California, Berkeley. In 2003 and 2004, he was on leave from the University of California, Berkeley, as CEO and then CTO of Dust Networks, Hayward, CA, a company he founded to commercialize wireless sensor networks. He has participated in many government science and technology programs, including the DARPA ISAT and Defense Science Study Groups, and he is currently a member of the Jasons. His research interests include MEMS, micro robotics, and low-power circuits.

torsdag 20 augusti 2015

Nanogenerator

https://en.wikipedia.org/wiki/Nanogenerator

Nanogenerator

From Wikipedia, the free encyclopedia
Nanogenerator is a technology that converts mechanical/thermal energy as produced by small-scale physical change into electricity. Nanogenerator has three typical approaches: piezoelectric, triboelectric, and pyroelectric nanogenerators. Both the piezoelectric and triboelectric nanogenerators can convert the mechanical energy into electricity. However, the pyroelectric nanogenerators can be used to harvest thermal energy from a time-dependent temperature fluctuation.

Piezoelectric nanogenerator[edit]

A piezoelectric nanogenerator is an energy harvesting device converting the external kinetic energy into an electrical energy based on the energy conversion by nano-structured piezoelectric material. Although its definition may include any types of energy harvesting devices with nano-structure converting the various types of the ambient energy (e.g. solar power and thermal energy), it is used in most of times to specifically indicate the kinetic energy harvesting devices utilizing nano-scaled piezoelectric material after its first introduction in 2006.[1]
Although still in the early stage of the development, it has been regarded as a potential breakthrough toward the further miniaturization of the conventional energy harvester, possibly leading the facile integration with the other types of energy harvester converting the different types of energy and the independent operation of mobile electronic devices with the reduced concerns for the energy source, consequently.[citation needed]

Mechanism[edit]

Working principle of nanogenerator where an individual nanowire is subjected to the force exerted perpendicular to the growing direction of nanowire. (a) An AFT tip is swept through the tip of the nanowire. Only negatively charged portion will allow the current to flow through the interface. (b) The nanowire is integrated with the counter electrode with AFT tip-like grating. As of (a), the electrons are transported from the compressed portion of nanowire to the counter electrode because of Schottky contact.
Working principle of nanogenerator where an individual nanowire is subjected to the force exerted parallel to the growing direction of nanowire
The working principle of nanogenerator will be explained for 2 different cases: the force exerted perpendicular and parallel to the axis of the nanowire.
The working principle for the first case is explained by a vertically grown nanowire subjected to the laterally moving tip. When a piezoelectric structure is subjected to the external force by the moving tip, the deformation occurs throughout the structure. The piezoelectric effect will create the electrical field inside the nanostructure; the stretched part with the positive strain will exhibit the positive electrical potential, whereas the compressed part with the negative strain will show the negative electrical potential. This is due to the relative displacement of cations with respect to anions in its crystalline structure. As a result, the tip of the nanowire will have an electrical potential distribution on its surface, while the bottom of the nanowire is neutralized since it is grounded. The maximum voltage generated in the nanowire can be calculated by the following equation:[2]
 V_{\text{max}} =  \pm \frac{3}{4(\kappa_0+\kappa)}[e_{\text{33}} - 2(1 + \nu) e_{\text{15}} - 2\nu e_{\text{31}}] \frac{a^3}{l^3} \nu_{\text{max}}
, where κ0 is the permittivity in vacuum, κ is the dielectric constant, e33, e15 and e31 are the piezoelectric coefficients, ν is the Poisson ratio, a is the radius of the nanowire, l is the length of the nanowire and νmax is the maximum deflection of the nanowire's tip.
The electrical contact plays an important role to pump out charges in the surface of the tip. The schottky contact must be formed between the counter electrode and the tip of the nanowire since the ohmic contact will neutralize the electrical field generated at the tip. In order to form an effective schottky contact, the electron affinity(Ea) must be smaller than the work function(φ) of the metal composing the counter electrode. For the case of ZnO nanowire with the electron affinity of 4.5 eV, Pt (φ=6.1eV) is a suitable metal to construct the schottky contact. By constructing the schottky contact, the electrons will pass to the counter electrode from the surface of the tip when the counter electrode is in contact with the regions of the negative potential, whereas no current will be generated when it is in contact with the regions of the positive potential, in the case of n-type semiconductive nanostructure (p-type semiconductive structure will exhibit the reversed phenomenon since the hole is mobile in this case). The formation of the schottky contact also contributes to the generation of direct current output signal consequently.
For the second case, a model with a vertically grown nanowire stacked between the ohmic contact at its bottom and the schottky contact at its top is considered. When the force is applied toward the tip of the nanowire, the uniaxial compressive is generated in the nanowire. Due to the piezoelectric effect, the tip of the nanowire will have a negative piezoelectric potential, increasing the Fermi level at the tip. Since the electrons will then flow from the tip to the bottom through the external circuit as a result, the positive electrical potential will be generated at the tip. The schottky contact will barricade the electrons being transported through the interface, therefore maintaining the potential at the tip. As the force is removed, the piezoelectric effect diminishes, and the electrons will be flowing back to the top in order to neutralize the positive potential at the tip. The second case will generate alternating current output signal.

Geometrical configuration[edit]

Depending on the configuration of piezoelectric nanostructure, the most of the nanogenerator can be categorized into 3 types: VING, LING and "NEG". Still, there is a configuration that do not fall into the aforementioned categories, as stated in other type.
Vertical nanowire Integrated Nanogenerator (VING).
Schematic view of typical Vertical nanowire Integrated Nanogenerator, (a) with full contact, and (b) with partial contact. Note that the grating on the counter electrode is important in the latter case.
VING is a 3-dimensional configuration consisting of a stack of 3 layers in general, which are the base electrode, the vertically grown piezoelectric nanostructureand the counter electrode. The piezoelectric nanostructure is usually grown from the base electrode by various synthesizing techniques, which are then integrated with the counter electrode in full or partial mechanical contact with its tip.
After Professor Zhong Lin Wang of the Georgia Institute of Technology has introduced a basic configuration of VING in 2006 where he used a tip of atomic force microscope (AFM) to induce the deformation of a single vertical ZnO nanowire, the first development of VING is followed in 2007.[3] The first VING utilizes the counter electrode with the periodic surface grating resembling the arrays of AFM tip as a moving electrode. Since the counter electrode is not in full contact with the tips of the piezoelectric nanowire, its motion in-plane or out-of-plane occurred by the external vibration induces the deformation of the piezoelectricnanostructure, leading to the generation of the electrical potential distribution inside each individual nanowire. It should be noted that the counter electrode is coated with the metal forming the schottky contact with the tip of the nanowire, where only the compressed portion of piezoelectric nanowire would allow the accumulated electrons pass through the barrier between its tip and the counter electrode, in case of n-type nanowire. The switch-on and –off characteristic of this configuration shows its capability of generating direct current generation without any requirement for the external rectifier.
In VING with partial contact, the geometry of the counter electrode plays an important role. The flat counter electrode would not induce the sufficient deformation of the piezoelectric nanostructures, especially when the counter electrode moves by in-plane mode. After the basic geometry resembling the array of AFM tips, a few other approaches have been followed for facile development of the counter electrode. Professor Zhong Lin Wang's group have generated counter electrode composed of ZnO nanorods utilizing the similar technique used for synthesizing ZnO nanowire array. Professor Sang-Woo Kim's group ofSungkyunkwan University (SKKU) and Dr. Jae-Young Choi's group of Samsung Advanced Institute of Technology (SAIT) in South Korea introduced bowl-shaped transparent counter electrode by combininganodized aluminum and the electroplating technology.[4] They also have developed the other type of the counter electrode by using networked single-walled carbon-nanotube (SWNT) on the flexible substrate, which is not only effective for energy conversion but also transparent.[5]
The other type of VING has been also suggested. While it shares the identical geometric configuration with the aforementioned, such a VING has full mechanical contact between the tips of the nanowires and the counter electrode.[6] This configuration is effective for application where the force is exerted in the vertical direction (toward the c axis of the piezoelectric nanowire), and it generates alternating current (AC) unlike VINGs with partial contact.
Lateral nanowire Integrated Nanogenerator (LING).
Schematic view of typical Lateral nanowire Integrated Nanogenerator
LING is a 2-dimensional configuration consisting of three parts: the base electrode, the laterally grown piezoelectric nanostructure and the metal electrode for schottky contact. In most of cases, the thickness of the substrate film is much thicker than the diameter of the piezoelectric nanostructure, so the individual nanostructure is subjected to the pure tensile strain.
LING is an expansion of single wire generator (SWG), where a laterally aligned nanowire is integrated on the flexible substrate. SWG is rather a scientific configuration used for verifying the capability of electrical energy generation of a piezoelectric material and is widely adopted in the early stage of the development.
As of VINGs with full mechanical contact, LING generates AC electrical signal. The output voltage can be amplified by constructing an array of LING connected in series on the single substrate, leading the constructive addition of the output voltage. Such a configuration may lead to the practical application of LING for scavenging large-scale power, for example, wind or ocean waves.
Nanocomposite Electrical Generators (NEG).
Schematic view of typical Nanocomposite Electrical Generator
"NEG" is a 3-dimensional configuration consisting three main parts: the metal plate electrodes, the vertically grown piezoelectric nanostructure and the polymer matrix which fills in between in the piezoelectricnanostructure.
NEG was introduced by Momeni et al.[7] It was shown that NEG has a higher efficiency compared to original nanogenerator configuration which a ZnO nanowire will be bended by an AFM tip. It is also shown that it provides an energy source with higher sustainability.
Other type. The fabric-like geometrical configuration has been suggested by Professor Zhong Lin Wang in 2008. The piezoelectric nanowire is grown vertically on the two microfibers in its radial direction, and they are twined to form a nanogenerator.[8] One of the microfibers is coated with the metal to form a schottky contact, serving as the counter electrode of VINGs. As the movable microfiber is stretched, the deformation of the nanostructure occurs on the stationary microfiber, resulting in the voltage generation. Its working principle is identical to VINGs with partial mechanical contact, thus generating DC electrical signal.

Materials[edit]

Among various piezoelectric materials studied for the nanogenerator, many of the researches have been focused on the materials with wurtzite structure such as ZnO, CdS[9] and GaN.[10] The greatest advantage of theses material arises from the facile and cost-effective fabrication technique, hydrothermal synthesis. Since the hydrothermal synthesis can be conducted in a low temperature environment under 100°C in addition to vertical and crystalline growth, these materials can be integrated in various substrates with reduced concern for its physical characteristics such as a melting temperature.
Endeavors for enhancing the piezoelectricity of the individual nanowire also led to the development of other piezoelectric materials based on Wurtzite structure. Professor Zhong Lin Wang of Georgia Institute of Technology introduced p-type ZnO nanowire.[11] Unlike the n-type semiconductive nanostructure, the mobile particle in p-type is a hole, thus the schottky behavior is reversed from that of n-type case; the electrical signal is generated from the portion of the nanostructure where the holes are accumulated. It is experimentally proved that p-type ZnO nanowire can generate the output signal near 10 times that of n-type ZnO nanowire.
From the idea that the material with perovskite structure is known to have more effective piezoelectric characteristic compared to that with wurtzite structure, Barium titanate (BaTiO3) nanowire has been also studied by Professor Min-Feng Yu of University of Illinois at Urbana Champaign.[12] The output signal is found to be more than 16 time that from a similar ZnO nanowire.
Professor Liwei Lin of University of California at Berkeley has suggested that PVDF can be also applied to form a nanogenerator.[13] Being a polymer, PVDF utilizes a near-field electrospinning for its fabrication, which is rather a different technique compared to other materials. The nanofiber can be directly written on the substrate controlling the process, and this technique is expected to be applied for forming self-powered textile based on nanofiber.
Comparison of the reported materials by 2010 is given in the following table.
MaterialTypeGeometryOutput voltageOutput powerSynthesisResearched at
ZnO (n-type)WurtziteD: ~100 nm, L: 200~500 nmVP=~9 mV @ R=500 MΩ~0.5 pW per cycle (estimated)CVD, hydrothermal processGeorgia Tech.
ZnO (p-type)WurtziteD: ~50 nm, L: ~600 nmVP=50~90 mV @ R=500 MΩ5~16.2 pW per cycle (calculated)CVDGeorgia Tech.
ZnO-ZnSWurtzite (Heterostructure)Not statedVP=~6 mV @ R=500 MΩ~0.1 pW per cycle (calculated)Thermal evaporation and etchingGeorgia Tech.
GaNWurtziteD: 25~70 nm, L: 10~20 μmVavg=~20 mV, Vmax=~0.35 V@ R=500 MΩ~0.8 pW per cycle (average, calculated)CVDGeorgia Tech.[10]
CdSWurtziteD: ~100 nm, L: 1 μmVP=~3 mVNot statedPVD, Hydrothermal ProcessGeorgia Tech.[9]
BaTiO3PervoskiteD: ~280 nm, L: ~15 μmVP=~25 mV @ R=100 MΩ~0.3 aJ per cycle (stated)High temperature chemical reactionUIUC[12]
PVDFPolymerD: 0.5~6.5 μm, L: 0.1~0.6 mmVP=5~30 mV2.5 pW~90 pW per cycle (calculated)Electro spinningUC Berkeley[13]

Applications[edit]

Nanogenerator is expected to be applied for various applications where the periodic kinetic energy exists, such as wind and ocean waves in a large scale to the muscle movement by the beat of a heart or inhalation of lung in a small scale. The further feasible applications are as follows.
Self-powered nano/micro devices. One of the feasible applications of nanogenerator is an independent or a supplementary energy source to nano/micro devices consuming relatively low amount of energy in a condition where the kinetic energy is supplied continuously. One of example has been introduced by Professor Zhong Lin Wang's group in 2010 by the self-powered pH or UV sensor integrated VING with an output voltage of 20~40 mV onto the sensor.
Still, the converted electrical energy is relatively small for operating nano/micro devices; therefore the range of its application is still bounded as a supplementary energy source to the battery. The breakthrough is being sought by combining the nanogenerator with the other types of energy harvesting devices, such as solar cell or biochemical energy harvester.[14][15] This approach is expected to contribute to the development of the energy source suitable for the application where the independent operation is crucial, such asSmartdust.
Smart Wearable Systems. The outfit integrated or made of the textiles with the piezoelectric fiber is one of the feasible applications of the nanogenerator. The kinetic energy from the human body is converted to the electrical energy through the piezoelectric fibers, and it can be possibly applied to supply the portable electronic devices such as health-monitoring system attached with the Smart Wearable Systems. The nanogenerator such as VING can be also easily integrated in the shoe employing the walking motion of human body.
Another similar application is a power-generating artificial skin. Professor Zhong Lin Wang's group has shown the possibility by generating AC voltage of up to 100 mV from the flexible SWG attached to the running hamster.[16]
Transparent and Flexible Devices. Some of the piezoelectric nanostructure can be formed in various kinds of substrates, such as flexible and transparent organic substrate. The research groups in SKKU (Professor Sang-Woo Kim's group) and SAIT (Dr. Jae-Young Choi's group) have developed the transparent and flexible nanogenerator which can be possibly used for self-powered tactile sensor and anticipated that the development may be extended to the energy-efficient touch screen devices. Their research focus is being extended to enhance the transparency of the device and the cost-effectiveness by substituting Indium-Tin-Oxide (ITO) electrode with a graphene layer.[17]
Implantable Telemetric Energy Receiver. The nanogenerator based on ZnO nanowire can be applied for implantable devices since ZnO not only is bio-compatible but also can be synthesized upon the organic substrate, rendering the nanogenerator bio-compatible in overall. The implantable device integrated with the nanogenerator can be operated by receiving the external ultrasonic vibration outside the human body, which is converted to the electrical energy by the piezoelectric nanostructure.

Triboelectric nanogenerator[edit]

A summary on the progress made in the output power density of triboelectric nanogenerators within 12 months.
A triboelectric nanogenerator is an energy harvesting device that converts the external mechanical energy into electricity by a conjunction of triboelectric effect and electrostatic induction. This new type of nanogenerator was firstly demonstrated in Prof. Zhong Lin Wang's group at Georgia Institute of Technology in the year of 2012.[18] As for this power generation unit, in the inner circuit, a potential is created by the triboelectric effect due to the charge transfer between two thin organic/inorganic films that exhibit opposite tribo-polarity; in the outer circuit, electrons are driven to flow between two electrodes attached on the back sides of the films in order to balance the potential. Since the most useful materials for TENG are organic, it is also named organic nanogenerator, which is the first of using organic materials for harvesting mechanical energy.
Ever since the first report of the TENG in January 2012, the output power density of TENG has been improved for five orders of magnitude within 12 months. The area power density reaches 313 W/m2, volume density reaches 490 kW/m3, and a conversion efficiency of ~60% has been demonstrated. Besides the unprecedented output performance, this new energy technology also has a number of other advantages, such as low cost in manufacturing and fabrication, excellent robustness and reliability, environmental-friendly, and so on. The triboelectric nanogenerator can be applied to harvest all kind mechanical energy that is available but wasted in our daily life, such as human motion, walking, vibration, mechanical triggering, rotating tire, wind, flowing water and more.[19]
The triboelectric nanogenerator has three basic operation modes: vertical contact-separation mode, in-plane sliding mode, and single-electrode mode. They have different characteristics and are suitable for different applications

Basic modes and mechanisms[edit]

Vertical Contact-Separation Mode
Vertical contact-separation mode of triboelectric nanogenerator
The working mechanism of the triboelectric nanogenerator can be described as the periodic change of the potential difference induced by the cycled separation and re-contact of the opposite triboelectric charges on the inner surfaces of the two sheets. When a mechanical agitation is applied onto the device to bend or press it, the inners surfaces of the two sheets will get into close contact and the charge transfer will begin, leaving one side of the surface with positive charges and the other with negative charges. This is just the triboelectric effect. When the deformation is released, the two surfaces with opposite charges will separate automatically, so that these opposite triboelectrc charges will generate an electric field in between and thus induce a potential difference across the top and bottom electrodes. In order to screen this potential difference, the electrons will be driven to flow from one electrode to the other through the external load. The electricity generated in this process will continue until the potentials of the two electrodes get back to even again. Subsequently, when the two sheets are pressed towards each other again, the triboelectric-charge-induced potential difference will begin to decrease to zero, so that the transferred charges will flow back through the external load, to generate another current pulse in the opposite direction. When this periodic mechanical deformation lasts, the alternating current (AC) signals will be continuously generated.[20][21]
As for the pair of materials getting in contact and generating triboelectric charges, at least one of them need to be an insulator, so that the triboelectric charges cannot be conducted away but will remain on the inner surface of the sheet. Then, these immobile triboelectric charges can induce AC electricity flow in the external load under the periodic distance change.
Lateral Sliding Mode
Lateral sliding mode of triboelectric nanogenerator
There are two basic friction processes: normal contact, and lateral sliding. We demonstrated here a TENG that is designed based on the in-plane sliding between the two surfaces in lateral direction.[22] With an intensive triboelectrification facilitated by sliding friction, a periodic change in the contact area between two surfaces leads to a lateral separation of the charge centers, which creates a voltage drop for driving the flow of electrons in the external load. The sliding-induced electricity generation mechanism is schematically depicted in the figure. In the original position, the two polymeric surfaces fully overlap and intimately contact with each other. Because of the large difference in the ability to attract electrons, the triboelectrification will leave one surface with net positive charges and the other with net negative charges with equal density. Since the tribo-charges on the insulators will only distribute in the surface layer and will not be leaked out for an extended period of time, the separation between the positively charged surface and negatively charged surface is negligible at this overlapping position, and thus there will be little electric potential drop across the two electrodes. Once the top plate with the positively charged surface starts to slide outward, the in-plane charge separation is initiated due to the decrease in contact surface area. The separated charges will generate an electric field pointing from the right to the left almost parallel to the plates, inducing a higher potential at the top electrode. This potential difference will drive a current flow from the top electrode to the bottom electrode in order to generate an electric potential drop that cancels the tribo-charge-induced potential. Because the vertical distance between the electrode layer and the tribo-charged polymeric surface is negligible compared to the lateral charge separation distance, the amount of the transferred charges on the electrodes approximately equals to the amount of the separated charges at any sliding displacement. Thus, the current flow will continue with the continuation of the ongoing sliding process that keeps increasing the separated charges, until the top plate fully slides out of the bottom plate and the tribo-charged surfaces are entirely separated. The measured current should be determined by the rate at which the two plates are being slid apart. Subsequently, when the top plate is reverted to slide backwards, the separated charges begins to get in contact again but no annihilation due to the insulator nature of the polymer materials. The redundant transferred charges on the electrodes will flow back through the external load with the increase of the contact area, in order to keep the electrostatic equilibrium. This will contribute to a current flow from the bottom electrode to the top electrode, along with the second half cycle of sliding. Once the two plates reach the overlapping position, the charged surfaces get into fully contact again. There will be no transferred charges left on the electrode, and the device returns to the first state. In this entire cycle, the processes of sliding outwards and inwards are symmetric, so a pair of symmetric alternating current peaks should be expected.
The mechanism of in-plane charge separation can work in either one directional sliding between two plates[23] or in rotation mode.[24] In the sliding mode, introducing linear grating or circular segmentation on the sliding surfaces is an extremely efficient means for energy harvesting. With such structures, two patterned triboelectric surfaces can get to fully mismatching position through a displacement of only a grating unit length rather than the entire length of the TENG so that it dramatically increase the transport efficiency of the induced charges.
Single-Electrode Mode
Single-electrode mode of triboelectric nanogenerator
A single-electrode-based triboelectric nanogenerator is introduced as a more practical and feasible design for some applications such as fingertip-driven triboelectric nanoagenerator.[25][26] The working principle of the single-electrode TENG is schematically shown in the figure by the coupling of contact electrification and electrostatic induction. In the original position, the surfaces of skin and PDMS fully contact with each other, resulting in charge transfer between them. According to the triboelectric series, electrons were injected from the skin to the PDMS since the PDMS is more triboelectrically negative than skin, which is the contact electrification process. The produced triboelectric charges with opposite polarities are fully balanced/screened, leading to no electron flow in the external circuit. Once a relative separation between PDMS and skin occurs, these triboelectric charges cannot be compensated. The negative charges on the surface of the PDMS can induce positive charges on the ITO electrode, driving free electrons to flow from the ITO electrode to ground. This electrostatic induction process can give an output voltage/current signal if the distance separating between the touching skin and the bottom PDMS is appreciably comparable to the size of the PDMS film. When negative triboelectric charges on the PDMS are fully screened from the induced positive charges on the ITO electrode by increasing the separation distance between the PDMS and skin, no output signals can be observed, as illustrated. Moreover, when the skin was reverted to approach the PDMS, the induced positive charges on the ITO electrode decrease and the electrons will flow from ground to the ITO electrode until the skin and PDMS fully contact with each other again, resulting in a reversed output voltage/current signal. This is a full cycle of electricity generation process for the TENG in contact-separation mode.

Applications[edit]

TENG is a physical process of converting mechanical agitation to an electric signal through the triboelectrification (in inner circuit) and electrostatic induction processes (in outer circuit). This basic process has been demonstrated for two major applications. The first application is energy harvesting with a particular advantage of harvesting mechanical energy. The other application is to serve as a self-powered active sensor, because it does not need an external power source to drive.
Harvesting vibration energy
Vibration is one of the most popular phenomena in our daily life, from walking, voices, engine vibration, automobile, train, aircraft, wind and many more. It exists almost everywhere and at all the time. Harvesting vibration energy is of great value especially for powering mobile electronics. The following Based on the fundamental principles of triboelectric nanogenerators, various technologies have been demonstrated for harvesting vibration energy. This application of triboelectric nanogenerator has been demonstrated in the following aspects: 1. Cantilever-based technique is a classical approach for harvesting mechanical energy, especially for MEMS. By designing the contact surface of a cantilever with the top and bottom surfaces during vibration, TENG has been demonstrated for harvesting ambient vibration energy based on the contact-separation mode.[27] 2. To harvest the energy from a backpack, we demonstrated a rationally designed TENG with integrated rhombic gridding, which greatly improved the total current output owing to the structurally multiplied unit cells connected in parallel.[28] 3. With the use of 4 supporing springs, a harmonic resonator-based TENG has been fabricated based on the resonance induced contact-separation between the two triboelectric materials, which has been used to harvest vibration energy from an automobile engin, a sofa and a desk.[29] 4. Recently, a three-dimensional triboelectric nanogenerator (3D-TENG) has been designed based on a hybridization mode of conjunction the vertical contact-separation mode and the in-plane sliding mode.36 The innovative design facilitates harvesting random vibration energy in multiple directions over a wide bandwidth. The 3-D TENG is designed for harvesting ambient vibration energy, especially at low frequencies, under a range of conditions in daily life, thus, opening the applications of TENG in environmental/infrastructure monitoring, charging portable electronics and internet of things.
Harvesting energy from human body motion
Since there is abundant mechanical energy generated on human bodies in people's everyday life, we can make use of the triboelectric nanogenerator to convert this amount of mechanical energy into electricity, for charging portable electronics and biomedical applications. This will help to greatly improve the convenience of people's life and expand the application of the personal electronics. A packaged power-generating insole with built-in flexible multi-layered triboelectric nanogenerators has been demonstrated, which enable harvesting mechanical pressure during normal walking. The TENG used here relies on the contact-separation mode and is effective in responding to the periodic compression of the insole. Using the insole as a direct power source, we develop a fully packaged self-lighting shoe that has broad applications for display and entertainment purposes. A TENG can be attached to the inner layer of a shirt for harvesting energy from body motion. Under the generally walking, the maximum output of voltage and current density are up to 17 V and 0.02 μA/cm2, respectively. The TENG with a single layer size of 2 cm×7 cm×0.08 cm sticking on the clothes was demonstrated as a sustainable power source that not only can directly light up 30 light-emitting diodes (LEDs), but also can charge a lithium ion battery by persistently clapping clothes.
Self-powered active strain/force sensors
An triboelectric nanogenerator automatically generates an output voltage and current once it is mechanically triggered. The magnitude or the output signal signifies the impact of the mechanical deformation and its time-dependent behavior. This is the basic principle of the TENG can be applied as a self-powered pressure sensor. The voltage-output signal can reflect the applied pressure induced by a droplet of water. All types of TENGs have a high sensitivity and fast response to the external force and show as a sharp peak signal. Furthermore, the response to the impact of a piece of feather (20 mg, ~0.4 Pa in contact pressure) can be detected. The sensor signal can delicately show these details of the entire process. The existing results show that our sensor can be applied for measuring the subtle pressure in real life.[30]
In a case that we make a matric array of the triboelectric nanogenerators, a large-area, and self-powered pressure map applied on a surface can be realized.[31] The response of the TENG array with local pressure was measured through a multi-channel measurement system. There are two types of output signals from the TENG: open circuit voltage and short circuit current. The Open circuit voltage is only dictated by the final configuration of the TENG after applying a mechanical triggering, so that it is a measure of the magnitude of the deformation, which is attributed to the static information to be provided by TENG. The output current depends on the rate at which the induced charge would flow, so that the current signal is more sensitive to the dynamic process of how the mechanical triggering is applied.
The active pressure sensor and the integrated sensor array based on the triboelectric effect have several advantages over conventional passive pressure sensors. First, the active sensor is capable of both static pressure sensing using the open-circuit voltage and dynamic pressure sensing using the short-circuit current, while conventional sensors are usually incapable of dynamic sensing to provide the loading rate information. Second, the prompt response of both static and dynamic sensing enables the revealing of details about the loading pressure. Third, the detection limit of the TENG for dynamic sensing is as low as 2.1 Pa, owing to the high output of the TENG. Fourth, the active sensor array presented in this work has no power consumption and could even be combined with its energy harvesting functionality for self-powered pressure mapping. Future works in this field involve the miniaturization of the pixel size to achieve higher spatial resolution, and the integration of the TEAS matrix onto fully flexible substrate for shape-adaptive pressure imaging.
Self-powered active chemical sensors
As for triboelectric nanogenerators, maximizing the charge generation on opposite sides can be achieved by selecting the materials with the largest difference in the ability to attract electrons and changing the surface morphology. In such a case, the output of the TENG depends on the type and concentration of molecules adsorbed on the surface of the triboelectric materials, which can be used for fabricating chemical and biochemical sensors. As an example, the performance of the TENG depends on the assembly of Au nanoparticles (NPs) onto the metal plate. These assembled Au NPs not only act as steady gaps between the two plates at strain free condition, but also enable the function of enlarging the contact area of the two plates, which will increase the electrical output of the TENG. Through further modification of 3-mercaptopropionic acid (3-MPA) molecules on the assembled Au NPs, the high-output nanogenerator can become a highly sensitive and selective nanosensor toward Hg2+ ions detection because of the different triboelectric polarity of Au NPs and Hg2+ ions. With its high sensitivity, selectivity and simplicity, the TENG holds great potential for the determination of Hg2+ ions in environmental samples. The TENG is a future sensing system for unreachable and access-denied extreme environments. As different ions, molecules, and materials have their unique triboelectric polarities, we expect that the TENG can become either an electrical turn-on or turn-off sensor when the analytes are selectively binding to the modified electrode surface. We believe this work will serve as the stepping stone for related TENG studies and inspire the development of TENG toward other metal ions and biomolecules such as DNA and proteins in the near future.[32]

Choice of materials and surface structures[edit]

Almost all materials known exhibit the triboelectrification effect, from metal, to polymer, to silk and to wood, almost everything. All of these materials can be candidates for fabricating TENGs, so that the materials choices for TENG are huge. However, the ability of a material for gaining/losing electron depends on its polarity. John Carl Wilcke published the first triboelectric series in a 1757 on static charges. A material towards the bottom of the series, when touched to a material near the top of the series, will attain a more negative charge. The further away two materials are from each other on the series, the greater the charge transferred. Beside the choice of the materials in the triboelectric series, the morphologies of the surfaces can be modified by physical techniques with the creation of pyramids-, square- or hemisphere-based micro- or nano-patterns, which are effective for enhancing the contact area and possibly the triboelectrification. However, the created bumpy structure on the surface may increase the friction force, which may possibly reduce the energy conversion efficiency of the TENG. Therefore, an optimization has to be designed for maximizing the conversion efficiency.
The surfaces of the materials can be functionalized chemically using various molecules, nanotubes, nanowires or nanoparticles, in order to enhance the triboelectrification effect. Surface functionalization can largely change the surface potential. The introduction of nanostructures on the surfaces can change the local contact characteristics, which may improve the triboelectrification. This will involve a large amount of studies for testing a range of materials and a range of available nanostructures.
Besides these pure materials, the contact materials can be made of composites, such embedding nanoparticles in polymer matrix. This not only changes the surface electrification, but also the permittivity of the materials so that they can be effective for electrostatic induction. Therefore, there are numerous ways for enhancing the performance of the TENG from the materials point of view. This gives an excellent opportunity for chemists and materials scientists to do extensive study both in the basic science and in practical application. In contrast, materials systems for solar cell and thermal electric, for example, are rather limited, and there are not very many choices for high performance devices.
Therefore, there are numerous ways for enhancing the performance of the TENG from the materials point of view. This gives an excellent opportunity for chemists and materials scientists to do extensive study both in the basic science and in practical application. In contrast, materials systems for solar cell and thermal electric, for example, are rather limited, and there are not very many choices for high performance devices.

Pyroelectric nanogenerator[edit]

A pyroelectric nanogenerator is an energy harvesting device converting the external thermal energy into an electrical energy by using nano-structured pyroelectric materials. Usually, harvesting thermoelectric energy mainly relies on the Seebeck effect that utilizes a temperature difference between two ends of the device for driving the diffusion of charge carriers.[33] However, in an environment that the temperature is spatially uniform without a gradient, such as in outdoor in our daily life, the Seebeck effect can not be used to harvest thermal energy from a time-dependent temperature fluctuation. In this case, the pyroelectric effect has to be the choice, which is about the spontaneous polarization in certain anisotropic solids as a result of temperature fluctuation.[34] The first pyroelectric nanogenerator was introduced by Prof. Zhong Lin Wang at Georgia Institute of Technology in 2012.[35] By harvesting the waste heat energy, this new type of nanogenerator has the potential applications such as wireless sensors, temperature imaging, medical diagnostics, and personal electronics.

Mechanism[edit]

The mechanism of the pyroelectric nanogenerator based on a composite structure of pyroelectric nanowries.(a-c) Schematic diagrams of the pyroelectric nanogenerator with negative electric dipoles under room temperature (a), heated (b) and cooled (c) conditions. The angles marked in the diagrams represent the degrees to which the dipole would oscillate as driven by statistical thermal fluctuations.
The working principle of pyroelectric nanogenerator will be explained for 2 different cases: the primary pyroelectric effect and the secondary pyroelectric effect.
The working principle for the first case is explained by the primary pyroelectric effect, which describes the charge produced in a strain-free case. The primary pyroelectric effect dominates the pyroelectric response in PZT, BTO, and some other ferroelectric materials.[36] The mechanism is based on the thermally induced random wobbling of the electric dipole around its equilibrium axis, the magnitude of which increases with increasing temperature.[37] Due to thermal fluctuations under room temperature, the electric dipoles will randomly oscillate within a degree from their respective aligning axes. Under a fixed temperature, the total average strength of the spontaneous polarization form the electric dipoles is constant, resulting in no output of the pyroelectric nanogenerator. If we apply a change in temperature in the nanogenerator from room temperature to a higher temperature, the increase in temperature will result in that the electric dipoles oscillate within a larger degree of spread around their respective aligning axes. The total average spontaneous polarization is decreased due to the spread of the oscillation angles. The quantity of induced charges in the electrodes are thus reduced, resulting in a flow of electrons. If the nanogenerator is cooled instead of heated, the spontaneous polarization will be enhanced since the electric dipoles oscillate within a smaller degree of spread angles due to the lower thermal activity. The total magnitude of the polarization is increased and the amount of induced charges in the electrodes are increased. The electrons will then flow in an opposite direction.
For the second case, the obtained pyroelectric response is explained by the secondary pyroelectric effect, which describes the charge produced by the strain induced by thermal expansion. The secondary pyroelectric effect dominates the pyroelectric response in ZnO, CdS, and some other wurzite-type materials. The thermal deformation can induce a piezoelectric potential difference across the material, which can drive the electrons to flow in the external circuit. The output of the nanogenerator is associated with the piezoelectric coefficient and the thermal deformation of the materials. The output current I of the pyroelectric nanogenerators can be determined by the equation of I=pA(dT/dt), where p is the pyroelectric coefficient, A is the effective area of the NG, dT/dt is the rate of change in temperature.

Applications[edit]

Pyroelectric nanogenerator is expected[by whom?] to be applied for various applications where the time-dependent temperature fluctuation exists. One of the feasible applications of the pyroelectric nanogenerator is used as an active sensor, which can work without a battery. One example has been introduced by Professor Zhong Lin Wang's group in 2012 by using a pyroelectric nanogenerator as the self-powered temperature sensor for detecting a change in temperature, where the response time and reset time of the sensor are about 0.9 and 3 s, respectively.[38] In general, the pyroelectric nanogenerator gives a high output voltage, but the output current is small. It not only can be used as a potential power source, but also as an active sensor for measuring temperature variation.